Process Modeling of Coimplantation Technology for Ultra-Shallow Junctions

Coimplantation technology is important to form ultra-shallow junctions in nano-devices. The impurities introduced by coimplantation react with dopants and implantation damages. These reactions induce transient diffusion of dopants and defects, causing the difficulty in controlling the dopant activation and diffusion in ultra-shallow junctions. Such transient behaviors are coupled with various physical effects. Therefore, experiments and simulation should be performed to elucidate the complex dopant reactions. This project will perform experiments to understand the physics of dopant-defect reactions during junction formation with coimplantation. Process models will be developed on the basis of the experimental results. In the first year, the basic diffusion behavior of carbon will be investigated by experiments. Then simulation and experiments will be performed to reveal the influence of implantation damage on carbon diffusion. The effects of dopants on carbon will also be studied. We will verify the continuum and atomic process models related to coimplantation technology. Process models for carbon will be proposed according to the experimental results. In the second year, the effects of carbon on defects and dopant activation will be investigated by experiments. The influence of preamorphization and carbon implantation on dopant diffusion will be identified. We will perform excimer laser annealing to understand the stability of carbon-defect complexes at high temperatures. After that, the reaction mechanisms between dopants, defects and carbon atoms will be elucidated and process models for coimplantation will be developed to help the optimization of thermal processes during formation of ultra-shallow junctions.

Project ID:PB9808-2399
External Project ID:NSC98-2221-E182-053-MY2