Project Details
Abstract
The GaN HEMT-based oscillator MMICs have being developed and designed in this project for S band
and C band wireless communication based on the experiences of development of high-frequency and
high-power semiconductor devices and the technique for microwave circuit design in Department of
Electronics, Chang Gung University. To achieve the integrated transmitter and receiver chips for mobile
communication systems, the performances of the oscillator circuits are investigated with wide frequency
tuning range, high DC-to-RF conversion efficiency, low output phase noise, and high output power level. The
2.4 GHz and 5.2 GHz high-efficiency oscillators will be designed by using a high efficiency power amplifier
with a proper on-chip or an external feedback network. The circuits will achieve an output power of 30 dBm
and conversion efficiency over 40 %. The wide tuning range oscillator will be implemented based on a
broadband amplifier. The frequency tuning range should be covering from 1 GHz to 5 GHz with an output
power of 25 dBm.
A 5.7 GHz ring oscillator MMIC with I/Q quadrature phase performance has been designed and
fabricated by using GaN-on-Si HEMT process. The measured output power is 10 dBm without using output
buffers. The free-running phase noise is -116 dBc/Hz@1 MHz. With using the injection locking technique,
the phase noise can be improved to be -131 dBc/Hz@1 MHz. In order to accomplish the concept in this
project, the relative performances of the high-efficiency and broadband power amplifiers have been also
established. The design of 3.5 GHz high-efficiency power amplifier is based cascode circuit topology. The
maximum output power of 4 W can be achieved with a power-added efficiency of 47 %. The broadband
amplifier using Darlington circuit has a bandwidth ranging from 1 GHz to 5 GHz. The measured maximum
output power approximates to 1 W.
Project IDs
Project ID:PB10207-1792
External Project ID:NSC102-2221-E182-070
External Project ID:NSC102-2221-E182-070
Status | Finished |
---|---|
Effective start/end date | 01/08/13 → 31/07/14 |
Keywords
- Oscillator circuit
- phase noise
- high-efficiency power amplifier
- broadband amplifier
- GaN microwave monolithic integrated circuit
- GaN-on-Si HEMT.
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