Si Doped Hfo2 with Novel Sinx Interfacial Capping Layer for Ferroelectric Tunnel Junction and Neuromorphic Applications

Project: National Science and Technology Council › National Science and Technology Council Academic Grants

Project Details

Project IDs

Project ID:PB11107-7328
External Project ID:MOST111-2221-E182-063
StatusFinished
Effective start/end date01/08/22 → 31/07/23

Keywords

  • Si:HfO2 ferroelectric
  • SiNx interfacial capping layer
  • ruthenium
  • orthorhombic
  • ferroelectric capacitor
  • polarization mechanism
  • endurance
  • reliability
  • ferroelectric tunnel junction (FTJ)
  • 3D X-point
  • 1S1F
  • artificial synapse
  • neuromorphic
  • low energy operation.

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