Silicon Nanocrystals Memory Device Study

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details


In the proposal, we focus on nanocrystal flash memory study. We will try to growth Si or Ge nonocrystal onto a thin tunnel oxide. Several oxide 2 will be used for tunnel oxide such as SiO2, Al2O3 or HfO2. After tunnel growth, there are two way to form nanocrystal in this proposal, one is that Hf、Al2O3、Ge or Hf、Si、Ge are co-sputtered onto tunnel oxide. The other is directly deposition nanocrystal by UHVCVD or LPCVD. Finally a control oxide will be deposited. To form nanocrystals, annealing temperature is crucial, so a lot of analyses tool and method will be need to understand nanocrystal formation mechanism. Electrical characteristic also will be studied in this proposal. Furthermore we will fabricate nanocrystal memory transistor in the further.

Project IDs

Project ID:PB9402-0192
External Project ID:NSC94-NU-7182-001
Effective start/end date01/01/0531/12/05


Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.