Study of High-K Zr and Zno in Thin Film Transistors and Sensor Applications

This project will focus on new high dielectric material (Zr, ZnO), and the use of titanium (Ti) doped in high dielectric materials, combined with rapid thermal annealing (RTA) to enhance the electrical of thin film transistors. Besides, the developed Ti-doped high-k materials can be applied in single/polysilicon thin-film transistor, and also be used to fabricate Electrolyte Insulator Semiconductor (EIS) pH sensor and extended gate ion sensitive field effect transistor (EGFET). This is a two-year plan. The focus of the first year is to develop high quality high-k dielectrics and thin-films. At first, high-k dielectrics Zr and ZnO doping with Ti (titanium) by co-sputterring and post rapid thermal annealing to passivate the trap states in the high-k dielectrics and the interfaces between the gate dielectrics and the polysilicon to improve the electrical characteristics of the high-k dielectrics. Since high-k materials with higher dielectrics constant and lower leakage current can be used as gate dielectrics of thin film transistors after proper RTA densification. The second year of this plan is to use high dielectric materials(Zr、Nb) to fabricate thin-film transistors. The use of Ti doped high dielectric material with co-sputter, which can significantly enhance the device characteristics of thin-film transistor. Furthermore, we look forward to combine the fabrication of pH sensor and the measurement methods. Therefore, this project will fabricate the single/poly-silicon thin film transistor to form electrolyte insulator semiconductor (EIS) PH sensor and extended gate ion sensitive field effect transistor for future bio-medical sensor applications.

Project ID:PB10108-2324
External Project ID:NSC101-2221-E182-045-MY2