The demonstration of high efficiency 5G mmW envelope tracking power amplifier using GaN on GaN MHz switching power supply technology

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Abstract

對於學術研究、國家發展及其他應用方面預期之貢獻方面,本計畫首先提出高阻氮化鎵基板(錳摻雜)及其磊晶技術,無磊晶層與基板失配問題、也無異質材料熱膨脹係數不匹配問題,解決基地台所須抗高溫、高生命期、高可靠度的微波毫米波電晶體來提升高頻效能想法相當前瞻且提升台灣無線基地台硬體製造能力,增強台灣在微波積體電路代工的競爭力,配合先進Angelov電子模型建立與封包追尋功率放大器技術,同時拓展台灣學術與經濟方面之廣度。

Project IDs

Project ID:PB11012-0692
External Project ID:MOST110-2622-E182-006
StatusFinished
Effective start/end date01/11/2131/10/22

Keywords

  • GaN
  • HEMT
  • GaN substrate
  • back barrier
  • AlGaN cap
  • millimeter-wave
  • the fifth generation mobile communication
  • power amplifier
  • envelope tracking

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