The Demonstration of High Efficiency Pa Module Using Novel Inaln/Gan Hfet on 6 Inch Soi Substrate

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details


Taiwan had started offering 4 generation (4G) wireless and mobile internet service (Long Term Evolution, LTE). Currently, 4G LTE system provides three licensed bands for industrial application such as 700〜860 MHz (FDD),1.5〜2.1GHz (FDD) and 2.3〜2.6 GHz(TDD) bands since last year. However, 4G signal coverage didn’t reach 60% in Taiwan region owing to the 4G base station facility was imported from foreign area and Taiwan had few key technology for high power base station industry. In addition, 4G communication system exists serious demands on power amplifier linearity, output power density, and power added efficiency. Moreover, the 4G base station facility inventory of Japan and US suppliers were also lacked owing to the strong requirement from Mainland China and Korea. Therefore, although the semiconductor technology is excellent and superior in Taiwan but Taiwan lacks of system and module integration ability for base station. For this project, first year, we will design and fabricate high frequency and low leakage current InAlN/GaN microwave power HEMT on 6 inch SOI substrate to reduce substrate loss tangent, improve the device breakdown voltage and bandwidth. Besides, the diamond-like carbon (similar thermal expansion coefficient with GaN) will be also adopted for thermal dissipation layer design. During second year, cryogenic chamber low-frequency noise model will be used for device buffer and surface traps identification together with the trap activation energy extraction. In order to further evaluate InAlN/GaN reliability degradation mechanism, the low-frequency noise spectra will be measured before and after high current or high voltage stress. In addition, the modified Angelov model will also be adopted to establish the nonlinear larger signal model for InAlN/GaN HEMT on SOI substrate together with the trap effect and thermal effect equation descriptions. Finally, we will conduct low loss and high thermal dissipation AlN package technology to realize high efficiency InAlN/GaN Doherty power amplifier for 4G base station applications. Overall, the project can demonstrate novel InAlN/GaN microwave power HEMT on SOI substrate and its reliability will also studied in advance. After the device evaluation is fully understood and realized, the power amplifier module will be also designed and demonstrated to enrich the system level ability for Taiwan wireless communication facility industry.

Project IDs

Project ID:PB10507-1731
External Project ID:MOST105-2221-E182-062
Effective start/end date01/08/1631/07/17


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