The Design Development and Chip Implementation of Multi-Level Cmos Memory by Lorentz Force Effect

As the complexity of integrated circuits increases, the demanding for sensor applications is more and more urgent. Among them, the magnetic field sensing devices and applications are an important technology. Since few magnetic devices and circuits are now available the development is very urgent for practical applications. Therefore, this project is dedicated to new magnetic memory devices and application circuits.In this project, the key research targets are(1) new device mechanism of changing mobility to store data by Lorentz force effect that is built by an internal metal loop to generate local magnetic field above the memory cell;(2) new memory cell that consists of a magnetic field sensitive NMOS and a coil (metal loop);(3) CMOS process compatible and multi-value memory design and application; and(4) unified memory device model with Lorentz force effect.Many design techniques will be proposed in this project to improve the circuit performance of the Lorentz CMOS multi-value memory design, writing, readout and application circuits. As compared to the most advanced prior art, the research target is very innovative and challenging. Development results of this project shall be very innovative. Besides, this project shall be very helpful to both the academic research and technical progress of microelectronics community as well as student training on analog/mixed-signal memory, sensor and interface applications circuit design.

Project ID:PB10811-0136
External Project ID:MOST108-2221-E182-063