Project Details
Abstract
In the development of a light addressable potentiometric sensor (LAPS),
there is an evolution from the average data received via single light source, to
the use of laser scanning in order to detect more information and also, higher
pixels is achieved. However, more time is consumed and larger space is
occupied due to the big facility volume in the scanning measurement process.
In this project, we propose the use of our MOCVD system and double side
epitaxial growth technique, in order to create a compound semiconductor based
LAPS platform. On the backside LED array is made, the front side is based of
an electrolyte insulator semiconductor (EIS) structure and so as to integrate
both together. The sensor is equipped with a frequency modulator for the LED
array driving circuit, which is able to quickly scan the pixel in a short period of
time. Such design brings about an innovative idea regards LAPS.
In the first year, we will grow GaN LED array on Sapphire substrate
and GaN EIS on Sapphire separately. And then, by using the wafer bonding
technology, EIS and LED array are bonded backside to backside together. We
can also design the driving circuit to drive a 5x5 prototype LED array in the
same period.
In the second year, we will focus our study on the double-sided GaN
epitaxial growth on the Sapphire or SiC substrates, so that EIS structure and
optical light source may be fully integrated into a LAPS structure. In the
second year progression, our team will also try to solve the surface
contamination problem during the regrowth of LED epitaxial fabrication. Next
step onwards; we can grow EIS together with LED array and improve the LED
light divergence problem, which can result in a low-resolution phenomenon.
In the third year, our team will attempt a double-sided epitaxial growth on
the heterogeneous (GaN/Sapphire/GaN, GaN/SiC) substrate. The LAPS device
will consist of an EIS structure on the front side and a 2D-LED structure on the
back for application and measurement. Additionally, by incorporating data from
the past two years, LAPS device will undergo 2-D scanning, including signal
optimization and sensing membrane selection. This will also complete the
integration of light source and sensor together, in the formation of a small
volume high-speed one-bodied light addressable potentiometric sensor.
Project IDs
Project ID:PB10308-2690
External Project ID:MOST103-2221-E182-025
External Project ID:MOST103-2221-E182-025
Status | Finished |
---|---|
Effective start/end date | 01/08/14 → 31/07/15 |
Keywords
- MOCVD
- EIS
- LAPS
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