The Development of Integrated Compound Semiconductor of Light-Addressable Ion Sensor.

Dr. P. Bergveld has revealed the basic structure of ISFET (Ion-Sensitive Field Effect Transistor) in 1970. After more than ten years, Dr. L. Bouss, C.D. Fung and other scholars have developed the EIS (Electrolyte-Insulator Semiconductor). And then Dr. D.G. Hafeman invented the LAPS (Light addressable Potential metric Sensor) in 1988. In the past four decades, these scholars have been hard working for the progress of different semiconductor sensors and providing great achievements for the related science and technology. Among those studies, in the early stage, separate light emitting diodes are usual adopted in the fabrication of LAPS. Recently, in July 2010, Japan and German scholars revealed simultaneously the ways to operate the LAPS by a laser scanning method. The conventional LAPS can only get a single average chemical concentration data. By way of laser scanning, it can get many pixels in a frame which can show out the concentration distribution of a certain unit area but takes much time to perform detection. In this proposal, we will adopt direct bandgap semiconductor as the substrate and the correspondent backside can be made for LED array and the front for ISFET. Thus, we can integrate the ISFET chip and the LED array. International project cooperation with Tohoku University with the measurement technology of modulation and demodulation is also raised. As a whole, we will optimize the parameters to fabricate integrate compound semiconductor LAPS (CSLAPS) which may perform a fast detection and a miniature volume within the coming 3 years.

Project ID:PB10007-2272
External Project ID:NSC100-2221-E182-038