The development of integrated compound semiconductor of light-addressable ion sensor

Dr. P. Bergveld has revealed the basic structure of ISFET (Ion-Sensitive Field Effect Transistor) in 1970. After more than ten years, Dr. L. Bouss, C.D. Fung and other scholars have developed the EIS (Electrolyte-Insulator Semiconductor) structure. And then in 1988, Dr. D.G. Hafeman invented the LAPS (Light Addressable Potential-metric Sensor). During the past four decades, these scholars have contributed much on the progress of different semiconductor sensors and providing great achievements for the related science and technology. Among those studies, in the early stage, single light emitting diode (LED) was adopted in the fabrication of LAPS. Recently, in July 2010, Japan and German scholars revealed a way to operate the LAPS by a laser scanning method. The conventional LAPS can only get a single average chemical concentration data. By way of laser scanning, it can get many pixels in a frame which can show out the concentration distribution of a certain unit area but takes much scanning time to perform the detection. In this proposal, we will adopt direct bandgap semiconductor as the substrate and its correspondent backside can be made for LED array and its front side for ISFET. By doing so, we can integrate the ISFET and the LED array together. International cooperation with Tohoku University in the area of modulation and demodulation measurement technology is also raised. As a whole, we are going to optimize all the parameters to fabricate an integrate compound semiconductor LAPS (CSLAPS) which may perform a fast detection and a miniature volume within the coming years.

Project ID:PB10202-1091
External Project ID:NSC101-2221-E182-047-MY2