The Development of Monolithic Integration of Power High-Electron-Mobility Transistors (HMET) and Light-Emitting Diode (LED) on SiC Substrate for Visible Light Communications Module (I)

The application of Light-Emitting Diodes (LED) will rise to the next generation “smart lighting”, and Visible Light Communications (VLC) is one of the most popular research. Utilizing visible light wave that replaces the micro wave as the communicated media leads to no Electromagnetic Interference (EMI) issues. Therefore, this project will achieve monolithic integration of power high-electron-mobility transistors (HMET) and LED on SiC substrate for VLC module which has advantages of low cost, low energy consumption, lighting, compact and great heating dissipation. In the first year: To fabricate the power HMET (10 gates) on sapphire substrate, and deposits wide bandgap Ga2O3 passivation layer as isolation and the bridge between drain pad and gate pad by Atomic Layer Deposition (ALD). The Ga2O3 layer can reduce the leakage current, so that the direct current characteristic of HEMT will be promoted. In the second year: Grow and fabricate the power HMET with Ga2O3 passivation layer on SiC substrate, and then LED will be bonded with eutectic metal bump onto the SiC near power HMET device by flip-chip bonding technology. The initial VLC module will be completed. Furthermore, the characteristic of DC and frequency will be optimized. In the third year: Monolithic LED and HEMT epitaxial structure will be achieved by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) with selected growth mode. Following, LED and HEMT devices will fabricated and connected by semiconductor photolithograph technology. The goal is over 150 MHz performance in signal transmission without modulation, and achieve monolithic, compact and well heating dissipation VLC system.

Project ID:PB10408-5743
External Project ID:MOST104-2221-E182-037