The Development of Plasma Treatment of Piii on Gd/sub 2/O/sub 3/ and W Nanocrystal

This project is mainly divided into two parts (1) Metal gate and high-k dielectrics and (2) Multi trap state memory. We plan to use Atomic Layer Deposition (ALD) system to realize the novel device we mentioned in this project, that is, “Process development of Novel metal gate devices with dipole modulated work function and with controllable shape nanocrystals.” 1. Fabrication and electrical analysis of fluorinated and nitrided metal nanocrystal flash memory. 2. Fabrication and electrical analysis of novel metal nanocrystal flash memory. 3. Fabrication and electrical analysis of low operation voltage metal nanocrystal flash memory. 4. Fabrication and electrical analysis of asymmetrical binary nanocrystal flash memory. 5. Physical analysis (XPS,SIMS, TEM) of novel metal nanocrystal flash memory. There are lots of academic references of high-k and metal gate, but we try to use different method to fabricate metal gate electrode and new type nanocrystal flash memory. We believe that if we can accomplish this project, our result can contribute to this field a lot.

Project ID:PB9902-2877
External Project ID:NSC99-2623-E182-006-NU