The Development of Transfer Free High Mobility N Doped Graphene (I)

This project focus on develop high mobility, on/off ratio, normally off and transfer free N doped Graphene transistor. 1st year: Develop the N doping and transfer free technique a Doping N into Graphene by NH3 plasma treatment b Doping N into Graphene by NH3 plasma pre-treatment on Cu c Doping N into Graphene by N2O plasma pre-treatment on Cu Mechanism: NH3 or N2O treated Cu as nitrogen source to doping Graphene in Graphene growth period to reduce the damage on Graphene 2nd year: Develop fluorinated Graphene and BN-like layer as substrate for Graphene a Form transfer free BN-like layer by N,B doped SiO2 b Form transfer free BN-like layer in interface between Cu and N,B doped SiO2 c Fluorinated Graphene as screening layer on SiO2 d Form fluorinated Graphene as screening layer by CF4 plasma pretreatment on Cu e Form transfer free BN-like layer between Cu and N,B doped SiO2 Mechanism: Form BN-like layer by the catalyst of Cu; screen the dangle bond of SiO2 from by fluorinated Graphene and BN-like layer; the transfer free process reduce impurity scattering effect of Graphene 3rd year: Develop one step formation fluorinated N type doped Graphene on BN-like layer a Form N doped Graphene on BN-like layer b Use CF4 plasma in low damaged PECVD to treat N doped Graphene on BN-like layer c One step formation fluorinated N type doped Graphene on BN-like layer Mechanism: the transfer free process reduce impurity scattering effect of Graphene

Project ID:PB10408-5724
External Project ID:MOST104-2221-E182-041