The Development of W and Ge Nano-Crystal Memory Devices by Plasma Immersion Ion Implantation

Plasma Immersion Ion Implantation (PIII) is a technology which is current widely investigated as an alternative to conventional bean line implantation for ultrashallow doping technology. However, there several other application areas in modern semiconductor processing. Plasma immersion ion implantation technique has advantages of fast processing, low cost, large area processing and high throughout. In this project, we develop of novel nano-crystal memory device by plasma immersion ion implantation technique. Here, we will research on three kinds of nano-crystals, W, Ge, and WN, which are different in their grain sizes, density, and thickness of tunneling oxide. At this step, mechanism of electron trapping and hole trapping are our main topic. We will divide this project to threes part: Part1. The PIII passivated process of O2 and O2+H2 are utilized to characterize the properties of wetting layer. Part2. Charge storage layers such as W or WN materials as trapping centers are considered to observe the effects of plasma immersion ion implantation process. Part 3. The high-k gate dielectric material is replacing tunnel oxide by plasma immersion implantation technique.

Project ID:PB9803-0059
External Project ID:NSC98-NU-E182-003