The investigation of electrical transport property and device application based on novel graphene nano-structure

In this project, we investigate the electrical transport property on graphene nano-ribbon(GNR) and integrate such graphene-based electronics in the application of next generation nano-electronic devices. Although the graphene-based radio-frequency transistor (RF transistor), have been studied to exhibit outstanding device performance, there is still lack of application in logic device since the intrinsic material property of graphene shows no bandgap. This issue therefore hinder the fabrication of high-speed logic transistor, and limit the praticle application in integrated circuit. Recently, scientists are effort to study the method for bandgap opening in graphene. The graphene nano-ribbon have been demostrated to be an good approach to address this issue since the bandgap value is depend on the GNR width. Unfortunately, the as-produced GNR usually suffer from disordered edges that make the bandgap poorly defined, which in turn results in a dramatically degraded carrier mobility. In this project, we therefore focus on the study of graphene nano-ribbon, where the carrier transport properties and the device performance will be investigated. In this project, the 1-year plan including: (1) Synthesis the novel and high quality of graphene nano-ribbon and (2) characterization of the as-produced GNR: the nano-structure、electronic structure and carrier transport property. The 2-year plan including: (1) Directly formation of GNR by selective etching method; (2) the investigation of graphene edge by using edge-healing、passivation; (3) characterization of the as-produced GNR: the nano-structure and carrier transport property. The 3-year plan including: (1) Integration of GNR-based transistor toward logic circuit devices and (2) the GNR-based integrated circuit devices on flexiable substrate.

Project ID:PB10106-0154
External Project ID:NSC101-2218-E008-018-MY2