The Study of the AlInN Applying to High Power Light Emitting Diodes

The main topic of this project is to grow the AlInN epilayer of modulated energy bandgap and lattice constant simultaneously and then apply to quantum barrier and current blocking layer. The superior high power blue and green light emitting diode epi-structure in different substrate, such as GaN, SiC and Si substrate will also be experimented. This project will be executed in three years and the action plan of each year will be as the following: I. The AlInN epilayer of modulated energy bandgap and lattice constant simultaneously will be the main focus of the study in the first year. The largest energy bandgap of quantum barrier and lattice-matched with quantum well will be gained and a high quantum efficiency of high power light emitting diode under larger current will be introduced. II. To develop the proper buffer layer for different substrates and grow a high quality GaN epilayer, a necessary process for GaN-based devices, will be the main focus of the study in the second year. Meanwhile, a new model that is capable of analyzing the mechanism of current distribution under lager current will also be constructed. III. To grow the high power light emitting diodes epi-structure on different substrates such as GaN, SiC and Si, separately by combining the previous accomplishments will be the main focus of the third year. Also, the growth conditions according to the distinct characteristic of each substrate will be modified and hopefully, the optimized growth conditions will thus be increased. A novel generation of high power LEDs is expected to deliver under the three-year comprehensive study.

Project ID:PB9907-12656
External Project ID:NSC99-2221-E182-040