The Study of Ti-Doped Mo Nano-Dots with CF4 Plasma in Rram and Flash Memory Applications

In recent years, there are many studies on resistive random access memory more and more widespread, from the earliest Pr1-xCaxMnO₃ (PCMO), so that the perovskite materials such as SrTiO₃ (STO), etc., and to the nearest metal oxide material, which is a binary metal oxide, such as MgO, TiO₂, CeO₂, ZnO, NiO and Nb₂O5, etc. The focus of the project is to apply new MoO₃ material with RF sputtering to fabricate noble MoO₃ nano-dots. The formation of the MoO₃ nano-dots can be found by proper rapid thermal annealing. By the way, Ti-doped high-k materials (MoO₃) in our study are also used to enhance the MoO₃ structure. Since the Ti-doped process can strengthen the bonding of high-k MoO₃ material and improve the dielectric constant. Besides, the sample with CF₄ plasma treatment can show a better charge retention. This is due to that the fluorine atom can passivate defects and traps to reinforce bond intensity after the CF₄ plasma treatment, which can prevent the charge loss effectively, have faster programming and erasing speeds, better I-V characteristics, retention and endurance. Furthermore, the above new materials (MoO₃) with double-layer memory structure will be also investigated. It’s expected that the programming and erasing speeds and set/reset operation of the MoO₃ nano-dots devices can be studied under different operation voltage and time. By the way, the retention test and cycling endurance will be used to observe the memory window variation and resistance value of the MoO₃ nano-dots devices through many programming /erasing operations for a long time. It’s expected that the developed MoO₃ nano-dots devices can be applied practically in the nonvolatile memory.

Project ID:PB10308-4310
External Project ID:MOST103-2221-E182-062