The Study on Low Hole Effective Mass P-Type Metal Oxide Materials and Thin Film Transistor Device Fabrication (Iii)

The seeking of promising p-type semiconductors has been greatly focused on stannous oxide/tin monoxide (SnO) latterly. Fundamental problems which are hindering to achieve better hole transport particularly in p-type oxides are due to high localized and anisotropic O 2p orbitals in valence band. On the other hand, SnO offers a relatively high hole-mobility as its valence band maxima (VBM) built-up of spatially spread of Sn 5s2 cations hybridized with fully occupied O 2p orbitals which permits direct overlaps among neighboring cations hence leading to a higher dispersion of valence band and lowering hole effective mass. Unfortunately, in actual applications of SnO such as manufacturing complementary thin film transistor (CTFT) or complementary metal oxide semiconductor (CMOS) devices involving both p- and n-type TFTs are quite few as can be found in literatures, whereas for CMOS inverters are the basic building blocks for advanced integrated circuits in system-on-chip and almost electronic devices. Therefore in this project plans, we propose a systematic study in producing SnOx-based p-i-n diodes and TFTs through a single step active channel deposition via industrial compatible conventional sputtering, ion-beam assisted deposition (IBAD), atomic layer deposition (ALD), and high-power impulse magnetron sputtering (HiPIMS) as a seed for the next sophisticate device fabrications i.e. CTFTs and CMOSs. One of examples of simple procedures can be achieved by controlling oxygen content in SnOx active layer for each deposition system at room temperature. The necessity of low temperature process in applications are allowing the high quality thin film to be deposited on flexible substrates such as polymer that easily to disproportion at high temperature due to low melting point. So that, it could be open up more chances for the next future application e.g. flexible displays, mobile phones, and other gadgets. Furthermore, the p-i-n diodes and TFTs prototype devices will be characterized by its physical-chemical properties for electrical transducer applications. In the reports of second year of works, we had been explicitly demonstrating as-deposited p-type SnO thin film on p-n diode devices as it revealed from rectification characteristic of diode. Subsequently, these proposed inspections are aided by both theoretical simulation and experimental approaches which had been reported in the last two years, thus a detailed and comprehensive understanding to achieve and improve the outcome results can be satisfied for the next period.

Project ID:PB10507-1873
External Project ID:MOST105-2221-E182-063