The Template Substrate Coated with Disulfide Compounds Makes It Easier to Approach Lattice Matching Epitaxial Technology for High Power Components and Uvc Deep Uv Leds

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details

Abstract

本計畫主要之研究目的是開發應用於高頻高功率元件與DUV深紫外光之具二硫化合物披覆基板。以一般商用藍寶石基板為底,在藍寶石基板表面,借助凡德瓦力披覆二硫化合物之二維材料超薄中介層,二維材料超薄中介層的表層晶格常數及基底熱膨脹係數與AlN或GaN高度匹配,二維材料超薄中介層為單層結構或者複合層結構,二維材料超薄中介層上借助凡德瓦力以本實驗室大陽日酸有機金屬氣相磊晶設備磊晶生長AlN或單晶GaN磊晶層。此研究提供可行技術滿足在藍寶石基板上進行單晶層磊晶,同時解決現有DUV LED和GaN系雷射二極體磊晶基板問題並能顯著降低製造成本,有效提升寬能隙光電及電子組件以及GaN系雷射二極體的組件效能。

Project IDs

Project ID:PB11007-2899
External Project ID:MOST110-2221-E182-062
StatusFinished
Effective start/end date01/08/2131/07/22

Keywords

  • MOCVD
  • GaN Laser
  • UVC LED
  • 2D material
  • diselenium compounds

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