The Ti-Doped High-K Materials(Ce,Ta) Combined with Plasma Treatment in Nano Device Applications

The project is to use the Ti-doped process in high-k materials as Ce and Ta by RF sputtering to improve the electrical characteristics in nano-device applications. The formation of the CeTi and TaTi nano-devices are found after proper rapid thermal annealing to form the better nanocrystal quantum dots for charge storage. Besides, for the control oxide, the two materials (Gd2O3 and HfO2) were used to replace conventional SiO2 in order to prevent the charge loss, increasing the programming and erasing speeds, and better data retention and endurance. Finally, the CF4 and NH3 plasma treatments are used to improve the defects 、breakdown electric fields and charge storage capability of the above Ti-doped nano-devices. The programming and erasing speeds are also studied under different operation voltage and time, and the charge loss is investigated through many programming/ erasing operations for performance improvement. Besides, the endurance cycling of the Ti-doped nano-devices is analyzed for the flash memory applications.

Project ID:PB10007-0368
External Project ID:NSC100-2221-E182-036