Ti-Doped ZnO and IGO Dielectric Combined with Plasma Treatment Applied in Bio-Sensor and Thin Film Transistors (I)

Project: National Science and Technology CouncilNational Science and Technology Council Academic Grants

Project Details


The plan will be new high-dielectric material zinc (Zn), cerium (Ce), indium (In) and gallium indium oxide (InGaO). Furthermore, we would like to develop high performance high-k dielectrics in thin film transistors and sensing membranes in bio-sensors. At first in this plan, advanced high quality high-k materials as CeO2、ZnO、In2〇3 and InGaO are developed and densified by using rapid thermal annealing, then Ti-doped process can strengthen the bonding of high-k material and improve the dielectric constant, and the properties of sensing membranes in bio-sensors and thin film transistors can be investigated by electrical, physical and materials analyses. Besides, the CF4 and NH3 plasma treatment can be also used to study the surface properties and the effect of fluorine and nitrogen passivation for high-k thin film transistors and sensor devices. This is a two-year plan. The focus of the first year is to develop advanced high quality high-k dielectrics (ZnO and CeO2) as sensing membranes with post different temperature rapid thermal annealing and Ti-doped process. We also study high quality high-k dielectrics (In2O3 and InGaO) in thin film transistors applications. The electrical characteristics of the high-k dielectrics can be improved by varying different argon to oxygen gas ratios (Ar/O) in sensing membranes and thin film transistors. The second year of the plan is to fabricate electrolyte-insulator-semiconductor (EIS) sensor and Extended gate ion sensitive field effect transistor (EGFET) sensor with the above developed high-k dielectrics (ZnO、CeO2、In2〇3 and InGaO) as sensing membrane. The CF4 plasma and NH3 plasma treatment, which can passivate dangling bonds and trap states in the high-k dielectrics and the interfaces between the dielectrics and TFT’s applications. Combining with CF4 plasma and NH3 plasma treatment, the characteristics of the EIS sensor and EGFET sensor can be further improved for higher sensitive and higher performance sensor devices, which can be practically applied in biomedical research, such as glucose, urea and DNA detection for the future display and sensor applications.

Project IDs

Project ID:PB10408-5740
External Project ID:MOST104-2221-E182-042
Effective start/end date01/08/1531/07/16


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