Using High-K Dielectric Layer Fabrication Full Transparent Thin-Film Transsistor at Room Temperature (II)

The technological advancement of Active Matrix Liquid Crystal Displays (AMLCDs) and Organic Light-Emitting Diode (AMOLED) are changing with time. Recently, it has started to dominate the display devices in a large scale and this has urged for more technological improvement. One challenging area for the electronics industry is seeking for higher mobility and stable materials. Substituting thin-film transistors (TFTs) made of amorphous Si (a-Si) or polycrystalline Si (poly-Si) that are currently used in active-matrix liquid crystal displays (AMLCDs) to oxide semiconductor transparent TFTs would enable improvement in the mobility , and resulting in a reduction in power consumption and would have a full transparent electronic device. In this proposal, we present fabricated a full transparent TFT device, using a ZnO, IZO or IGZO as an active channel layer. Both bottom gate and top gate structure will be fabricated to compare their electric characteristics. Transparent oxide semiconductor layer were deposited by PLD or sputtering system at room temperature process. A HfO2, Gd2O3 or LaAlO3 dielectric layer will be selected to be insulated layer to effectively lower operating voltage and get higher on/off current ratio up to 106. Finally, an organic-inorganic complementary transparent thin-film transistor inverter (CTFT Inverter) will be investigated and fabricated in this proposal.

Project ID:PB9908-0612
External Project ID:NSC99-2221-E182-058