Using High-K Dielectric Layer Fabrication Full Transparent Thin-Film Transsistor at Room Tempture(I)

The technological advancement of Active Matrix liquid crystal displays (AMLCDs) and Organic Light-Emitting Diode (AMOLED) are changing with time. Recently, it has started to dominate the display devices in a large scale and this has urged for more technological improvement. One challenging area for the electronics industry is seeking for higher mobility and stable matrials. Substituting thin film transistors (TFTs) made of amorphous Si (a-Si) or polycrystalline Si (poly-Si) that are currently used in active-matrix liquid crystal displays (AMLCDs) to oxide semiconductor transparent TFTs would enable improvement in the mobility，and resulting in a reduction in power consumption and would have an full transparent electronic device. In this proposal，we present fabricated a full transparent TFT device, with a ZnO, IZO or IGZO as an active channel layer. We will develop bottom gate and top gate structure both to fabricated ZnO, IZO, and IGZO TTFTs. Transparent oxide semiconductor layer were deposited by PLD or sputtering system at room temperature process. A HfO2、ZrO2 or Gd2O3 dielectric layer will be selected to be insulated layer，which was effective lower operating voltage and enable the ZnO TFT to operate at rescannable power. We believe that the consumer application will be further devolved widely based on transparent electronics.

Project ID:PB9808-2410
External Project ID:NSC98-2221-E182-059