Abstract
The present invention provides a semiconductor structure having a graphene layer, comprising a semiconductor substrate, a graphene layer, and a gallium nitride layer. And, the present invention provides the fabrication method for the semiconductor structure having a graphene layer.
| Translated title of the contribution | THE SEMICONDUCTOR STRUCTURE HAVING A GRAPHENE LAYER AND THE FABRICATION METHOD THEREOF. |
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| Original language | Chinese (Traditional) |
| Patent number | I642804 |
| IPC | C23C 16/02(2006.01); C23C 16/34(2006.01); C30B 25/00(2006.01); C30B 25/18(2006.01); H01L 21/02(2006.01); H01L 21/205(2006.01) |
| State | Published - 01 12 2018 |
Bibliographical note
公開公告號: I642804Announcement ID: I642804