一種利用半導體晶體之自然劈裂面選擇性成長氮化物半導體元件的方法

A method for selectively growing a nitride semiconductor component by using the natural cleaved surface of a semiconductor crystal can resolve the problem of crystal cracking during the temperature reduction process in an epitaxial process, thereby obtaining a crystal with low defect density and increased epitaxial quality, improving the performance and reliability of a component. The invented method includes growing a nitride semiconductor along a selective region of the natural cleaved surface of a crystal. Thus, the method can effectively improved the problem associated with a mismatch of the lattice constant between the substrate and the crystal and a difference in thermal expansion coefficient, and reduce the formation of excessive defects during an epitaxial process, while reducing component current leakage and operating voltage, etc.