Abstract
The invention provides that the semiconductor interconnection line and manufacturing method thereof, in which including semiconductor substrate, dielectric layer, barrier metal, a-C layer, and metal layer.
Translated title of the contribution | THE SEMICONDUCTOR INTERCONNECTION LINE AND MANUFACTURING METHOD THEREOF |
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Original language | Chinese (Traditional) |
IPC | H01L-023/532(2006.01);H01L-021/768(2006.01) |
State | Published - 16 09 2017 |
Bibliographical note
公開公告號: 2.01733071E8Announcement ID: 2.01733071E8