Abstract
The invention discloses a manufacturing method to raise the stability of threshold voltage of MOSFET. Also, the invention develops the manufacturing process of MOSFET with tunable interface dipole gate oxide and Fermi-level pinning free metal gate.
| Translated title of the contribution | THE MANUFACTURING METHOD FOR FORMING MOSFET HAVING THE STABLE THRESHOLD VOLTAGE |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I487037 |
| IPC | H01L 21/336(2006.01); H01L 21/28(2006.01) |
| State | Published - 01 06 2015 |
Bibliographical note
公開公告號: I487037Announcement ID: I487037