Abstract
The present invention, firstly, the p-type GaN semiconductor layer is provided, then, the different thickness and coverage for titanium metal are coated on the p-type GaN semiconductor layer. Next, the activation process is carried out in the heating tube under the nitrogen gas and quite high temperature, about certain minutes. Finally, The titanium metal is removed after the activation process, therefore the carrier concentration can be selectively changed, in order to enhance lightness for p-type nitride group compound LED.
| Translated title of the contribution | Method to enhance lightness for p-type nitride group compound LED |
|---|---|
| Original language | Chinese (Traditional) |
| IPC | H01L 33/00(2010.01) |
| State | Published - 01 04 2008 |
Bibliographical note
公開公告號: 2.00816511E8Announcement ID: 2.00816511E8