一種製造有機薄膜電晶體之方法及其成品

The present invention relates to a method for manufacturing an organic thin-film transistor. The organic thin-film transistor mainly comprises a substrate, a gate electrode, a dielectric layer, a drain and source electrode and an organic active layer. The dielectric layer of the organic thin-film transistor is formed by sputtering hafnium oxide with a high dielectric constant at a low temperature. A higher dielectric constant can be obtained by using hafnium oxide with a high dielectric constant. The working pattern of the organic thin-film transistor is to apply a DC bias through the gate so as to accumulate charge on an organic active layer to sense a tunnel, and the accumulated charge is proportional to capacitance and voltage, Q=CV. Therefore, when the capacitance is rising, the applied operating voltage can be dropped. Moreover, as the entire manufacturing process pertains to a low temperature sputtering(PVD), the organic thin-film transistor can be produced on a flexible substrate and thus applied to a flexible electronic product.