一種高反射率發光二極體晶片之製造方法

The invention provides a method of manufacturing chip of light emitting diode body with high reflectivity. The light emitting diode chip is fabricated first, then the light emitting diode is flip-chip mounting on the substrate, wherein the light emitting diode chip is stacked up by the substrate, the N type gallium nitride semiconductor layer, the P type gallium nitride semiconductor layer, the light emitting layer, the first electrode, the second electrode, and the reflective metal conducting layer. The said reflective metal conducting layer is stacked up by the transparent conducting electricity layer, silver, and gold. The transparent conducting layer and silver are placing into an oxidation furnace first, then carrying out annealing process to transform the transparent conducting layer into transparent metal oxide, so that the light can penetrate to the silver layer for reflection. Then a gold layer is coated on the silver layer. Therefore, only the transparent conducting layer and the silver of the reflective metal conducting layer are placed into the oxidation furnace , preventing the gold from migrating into the silver. Therefore, the silver can maintain excellent reflectivity.