中空導線結構及其製作方法

Translated title of the contribution: Hollow lead structure and manufacturing method thereof

Liann-Be Chang (Inventor)

Research output: Patent

Abstract

The present invention relates to a hollow lead structure and manufacturing method thereof for improving the lead characteristics of LCD. By the special structure of the hollow lead in the present invention, the line width can be reduced while increasing the cross section, so as to reduce the resistance of the lead. Also, in order to reduce the parasitic capacitance, an insulation layer with low dielectric constant is filled into the middle and the sides of the hollow portion in the lead, so that the operating speed can be maintained. Or, an insulation layer with low dielectric constant is filled into the vertical cross section area of the gate array and the data lines for ensuring the normal operation to solve the problem of increasing parasitic capacitance and decreasing operation speed.
Translated title of the contributionHollow lead structure and manufacturing method thereof
Original languageChinese (Traditional)
Patent numberI249068
IPCG02F 1/1345(2006.01)
StatePublished - 11 02 2006

Bibliographical note

公開公告號: I249068
Announcement ID: I249068

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