以低破壞性蝕刻技術實現增強型P型閘極氮化鎵場效應電晶體及二極體之研究

Translated title of the contribution: Investigation of Normally-off p-GaN Gate HEMTs and Diodes Using Low Damage Etching Technique
  • 李柏宏

Research output: Types of Thesis › Master's thesis

Translated title of the contributionInvestigation of Normally-off p-GaN Gate HEMTs and Diodes Using Low Damage Etching Technique
Original languageChinese (Traditional)
Supervisors/Advisors
  • Chiu, Hsien-Chin, Supervisor
StatePublished - 2017
Externally publishedYes

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