以感應耦合電漿二階段深度蝕刻氮化鎵

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Cite this

@article{264ec35ab7e44c7cbb5ca53c04081f7f,

title = "以感應耦合電漿二階段深度蝕刻氮化鎵",

keywords = "ICP功率, RF功率, 光阻, 氮化鎵, 蝕刻深度, 蝕刻輪廓",

author = "書史劉 and Liann-Be Chang and Ming-Jer Jeng",

year = "2001",

language = "繁體中文",

volume = "33",

pages = "239--246",

journal = "材料科學與工程",

issn = "0379-6906",

number = "4",

}