Abstract
The invention discloses an AlGaInN nitride substrate that utilizes TiN as a buffer layer and the manufacture method of the substrate. The method includes depositing TiN(111) on a Si(111) substrate for use as the buffer layer and epitaxial-growing III-V nitride structure AlGaInN(0001) on the buffer layer. This method not only produces high quality III-V AlGaInN nitride epitaxy layer to form vertical feed-through AlGaInN nitride devices that have TiN reflection facet to increase performance of photoelectric devices, but also avoids amorphous SiNx being produced at Si substrate in the III-V AlGaInN epitaxy process, thereby increasing yield of wafers.
Translated title of the contribution | AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof |
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Original language | Chinese (Traditional) |
IPC | H01L 29/04(2006.01); H01L 21/20(2006.01) |
State | Published - 16 09 2006 |
Bibliographical note
公開公告號: 2.00633248E8Announcement ID: 2.00633248E8