Abstract
The invention discloses an AlGaInN nitride substrate that utilizes TiN as a buffer layer and the manufacture method of the substrate. The method includes depositing TiN(111) on a Si(111) substrate for use as the buffer layer and epitaxial-growing III-V nitride structure AlGaInN(0001) on the buffer layer. This method not only produces high quality III-V AlGaInN nitride epitaxy layer to form vertical feed-through AlGaInN nitride devices that have TiN reflection facet to increase performance of photoelectric devices, but also avoids amorphous SiNx being produced at Si substrate in the III-V AlGaInN epitaxy process, thereby increasing yield of wafers.
| Translated title of the contribution | AlGaInN nitride substrate utilizing TiN as buffer layer and manufacture method thereof |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I264835 |
| IPC | H01L 29/04(2006.01); H01L 21/20(2006.01) |
| State | Published - 21 10 2006 |
Bibliographical note
公開公告號: I264835Announcement ID: I264835