以氮化鈦作為緩衝層之AlGaInN氮化合物基板結構及其製造方法

The invention discloses an AlGaInN nitride substrate that utilizes TiN as a buffer layer and the manufacture method of the substrate. The method includes depositing TiN(111) on a Si(111) substrate for use as the buffer layer and epitaxial-growing III-V nitride structure AlGaInN(0001) on the buffer layer. This method not only produces high quality III-V AlGaInN nitride epitaxy layer to form vertical feed-through AlGaInN nitride devices that have TiN reflection facet to increase performance of photoelectric devices, but also avoids amorphous SiNx being produced at Si substrate in the III-V AlGaInN epitaxy process, thereby increasing yield of wafers.