以氮化鋁鎵背屏障層實現高效能氮化鋁鎵/氮化鎵高電子遷移率電晶體

Translated title of the contribution: High RF Performance AlGaN/GaN High Electron Mobility Transistor with AlGaN Back Barrier Design

黃崇榕

Research output: Types of Thesis › Master's thesis

Translated title of the contributionHigh RF Performance AlGaN/GaN High Electron Mobility Transistor with AlGaN Back Barrier Design
Original languageChinese (Traditional)
Supervisors/Advisors
  • Chiu, Hsien-Chin, Supervisor
StatePublished - 2019
Externally publishedYes

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