以溶膠–凝膠製程製作溶膠粒子供製作濺鍍用靶材之方法

Translated title of the contribution: Production method of sol particle from sol-gel process for manufacturing sputter targetfor enhancing target quality and lifetime and improving electric conductivity and transparency of the sputtered film

Hsin-Chun Lu (Inventor), JIA-FU HONG (Inventor)

Research output: Patent

2 Downloads (Pure)

Abstract

This invention provides the production method of sol particle from sol-gel process for manufacturing sputter target. It makes use of adequate solvent and additives to dissolve different metal compounds for the preparation of two clear precursor solutions. The two solutions are then mixed thoroughly so that the coagulation reaction from the specific components of the metal compounds occurs to for stable sol solution with suspension gel of adequate molecular weight, homogenous composition and small particle diameter. The sputter target is then produced after removing solvent, press molding and sintering treatment. The sputter target for the manufacture of indium tin oxide (ITO) film can be obtained by utilizing this sol-gel process. The particle size and homogeneity of composition particles of the sputter target have influences on the electric conductivity and transparency of the ITO film. Because the sputter target produced by sol-gel process through coagulation reaction of mixed solution shows compositional homogeneity in molecular level, electric conductivity and transparency of the sputtered film is improved by using such sputter target. And also because the constitutional particles are smaller, it further reduces the temperature for sintering and thus conserves energy consumption. The lifetime of the sputter target is increased as the smaller particles in the target microstructure can reduce the degree of shrinkage during sputtering process and enhance contact between cooling water and target to prevent overheating.
Translated title of the contributionProduction method of sol particle from sol-gel process for manufacturing sputter targetfor enhancing target quality and lifetime and improving electric conductivity and transparency of the sputtered film
Original languageChinese (Traditional)
Patent number147023
IPCC23C 14/12(2006.01)
StatePublished - 11 12 2001

Bibliographical note

公開公告號: 467971.0
Announcement ID: 467971.0

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