Translated title of the contribution | Epitaxial growth of AlGaN/GaN HEMT structures on Silicon Substrate by MOCVD |
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Original language | Chinese (Traditional) |
Supervisors/Advisors |
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State | Published - 2014 |
Externally published | Yes |
以矽基板磊晶成長氮化鋁鎵/氮化鎵高電子遷移率電晶體結構
彭建勛
Research output: Types of Thesis › Master's thesis