以覆晶 MSM-2DEG 變容器增加 HEMT 抗靜電放電能力之研究

Translated title of the contribution: Improvement of ESD Robustness of Flip-Chip GaN-based HEMT with MSM-2DEG Varactor

王淞丞

Research output: Types of Thesis › Master's thesis

Translated title of the contributionImprovement of ESD Robustness of Flip-Chip GaN-based HEMT with MSM-2DEG Varactor
Original languageChinese (Traditional)
Supervisors/Advisors
  • Chang, Liann-Be, Supervisor
StatePublished - 2013
Externally publishedYes

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