以高介電係數材料氧化鉺為氮化鋁鎵/氮化鎵高電子遷移率電晶體之研究

Translated title of the contribution: Improved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN HEMT Structure

蔡盈杰

Research output: Types of Thesis › Master's thesis

Translated title of the contributionImproved Gate leakage and Microwave Performance by Inserting A Thin Erbium oxide layer on AlGaN/GaN HEMT Structure
Original languageChinese (Traditional)
Supervisors/Advisors
  • Lin, Ray-Ming, Supervisor
StatePublished - 2012
Externally publishedYes

Access to Document

Cite this