低阻碳化矽基板上p型閘極增強型氮化鎵高電子遷移率電晶體元件熱行為之研究

Translated title of the contribution: The Thermal Behavior of Enhancement-Mode p-GaN Gate HEMTs on low resistivity SiC Substrate

黃俞鈞

Research output: Types of Thesis › Master's thesis

Translated title of the contributionThe Thermal Behavior of Enhancement-Mode p-GaN Gate HEMTs on low resistivity SiC Substrate
Original languageChinese (Traditional)
Supervisors/Advisors
  • Chen, Szi-Wen, Supervisor
StatePublished - 2021
Externally publishedYes

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