使用原子層沉積系統沉積氧化鎵作為閘極材料來提升氮化鎵高速元件特性之研製

Translated title of the contribution: Improved Device Performance of AlGaN/GaN HEMTs With Ga2O3 as Dielectric by Atomic Layer Deposition

高裔軒

Research output: Types of Thesis › Master's thesis

Translated title of the contributionImproved Device Performance of AlGaN/GaN HEMTs With Ga2O3 as Dielectric by Atomic Layer Deposition
Original languageChinese (Traditional)
Supervisors/Advisors
  • Lin, Ray-Ming, Supervisor
StatePublished - 2015
Externally publishedYes

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