使用抗火閘極金屬製程之銻化物高電子遷移率場效電晶體與元件特性研究

Translated title of the contribution: Device Characterization of Antimonide Based HEMTs with Refractory Schottky Gate Metal Design

林文宇

Research output: Types of Thesis › Master's thesis

Translated title of the contributionDevice Characterization of Antimonide Based HEMTs with Refractory Schottky Gate Metal Design
Original languageChinese (Traditional)
Supervisors/Advisors
  • Chiu, Hsien-Chin, Supervisor
StatePublished - 2014
Externally publishedYes

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