| Translated title of the contribution | Effect of InGaN/GaN asymmetric quantum wells on LED properties |
|---|---|
| Original language | Chinese (Traditional) |
| Supervisors/Advisors |
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| State | Published - 2016 |
| Externally published | Yes |
使用氮化銦鎵/氮化鎵非對稱量子井對發光二極體之影響
陳彥任
Research output: Types of Thesis › Master's thesis