使用氮化鎵高電子遷移率電晶體實現X-band低雜訊放大器與Sub-6 band功率放大器

Translated title of the contribution: The implementation of X-band LNA and Sub-6 Band PA by using GaN HEMT Technology
  • 康亦捷

Research output: Types of Thesis › Master's thesis

Translated title of the contributionThe implementation of X-band LNA and Sub-6 Band PA by using GaN HEMT Technology
Original languageChinese (Traditional)
Supervisors/Advisors
  • Chiu, Hsien-Chin, Supervisor
StatePublished - 2019
Externally publishedYes

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