保護化合物半導體免於靜電放電破壞的方法

This invention is a method of protecting a compound semiconductor from electrostatic discharge damages, comprising of the following steps: (a) forming an LED semiconductor on a substrate, the LED substrate having a multi-layered structure and a first and a second electrodes; (b) forming a conductive layer-insulation layer-conductive layer capacitance flip chip substrate that includes a first conductive layer, an insulation layer, and a second conductive layer, with the insulation layer being formed between the first and second conductive layers and being made of a layer of high dielectric constant material, and the conductive layer-insulation layer-conductive layer substrate having a third and a forth electrodes; (c) connecting the first and second electrodes of the LED semiconductor to the respective third and the forth electrodes of the conductive layer-insulation layer-conductive layer capacitance flip chip substrate. As a result, this structure can effectively prevent electrostatic discharge damages.