Abstract
This invention provides a light addressable potentiometer sensing unit, comprising a conductive substrate, a metal oxide semiconductor layer and a sensing layer. The material of the metal oxide semiconductor layer comprises IGZO, IGO, IZO, ITZO, SnO2or ZnO. Hence, due to its wide energy band gap in the metal oxide semiconductor layer, no visible light absorption is observed. The stability of the experiment has been increased significantly by this invention.
| Translated title of the contribution | LIGHT ADDRESSABLE POTENTIOMETRIC SENSING UNIT |
|---|---|
| Original language | Chinese (Traditional) |
| Patent number | I585401 |
| IPC | G01N 27/26(2006.01) |
| State | Published - 01 06 2017 |
Bibliographical note
公開公告號: I585401Announcement ID: I585401