具有釤鈦氧化物之離子場效電晶體及其離子感測電極

Translated title of the contribution: Ion sensitive field effect transistor doped with samarium-titanium oxide compound and ion sensing electrode having the same

Min-Hsien Wu (Inventor), Tung-Ming Pan (Inventor), Chao-Sung Lai (Inventor), MING-DE HUANG (Inventor)

Research output: Patent

Abstract

This invention discloses an ion sensitive field effect transistor which is doped with samarium-titanium oxide compound. The ion sensitive field effect transistor comprises a semi-conductor layer, and a sensing layer and a conducting layer which are respectively setup on two opposite sides of the semi-conductor layer. Particularly, the sensing layer comprises a material formed by samarium-titanium oxide compound which generates a corresponding electric potential according to a pH value when contact is made with a sample material. The electric potential is output through the conducting layer which is electrically connected to the sensing layer; hence, a pH value change of the sample material can be precisely measured. This invention also discloses an ion sensing electrode having the ion sensitive field effect transistor doped with samarium-titanium oxide compound.
Translated title of the contributionIon sensitive field effect transistor doped with samarium-titanium oxide compound and ion sensing electrode having the same
Original languageChinese (Traditional)
Patent numberI388824
IPCG01N-027/414(2006.01);G01N-027/403(2006.01)
StatePublished - 11 03 2013

Bibliographical note

公開公告號: I388824
Announcement ID: I388824

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