Abstract
This invention discloses an ion sensitive field effect transistor which is doped with samarium-titanium oxide compound. The ion sensitive field effect transistor comprises a semi-conductor layer, and a sensing layer and a conducting layer which are respectively setup on two opposite sides of the semi-conductor layer. Particularly, the sensing layer comprises a material formed by samarium-titanium oxide compound which generates a corresponding electric potential according to a pH value when contact is made with a sample material. The electric potential is output through the conducting layer which is electrically connected to the sensing layer; hence, a pH value change of the sample material can be precisely measured. This invention also discloses an ion sensing electrode having the ion sensitive field effect transistor doped with samarium-titanium oxide compound.
Translated title of the contribution | Ion sensitive field effect transistor doped with samarium-titanium oxide compound and ion sensing electrode having the same |
---|---|
Original language | Chinese (Traditional) |
Patent number | I388824 |
IPC | G01N-027/414(2006.01);G01N-027/403(2006.01) |
State | Published - 11 03 2013 |
Bibliographical note
公開公告號: I388824Announcement ID: I388824